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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I I IIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII AC and DC Motor Controls Switching Regulators Inverters Solenoid and Relay Drivers Fast Turn-Off Times 150 ns Inductive Fall Time at 25_C (Typ) 750 ns Inductive Storage Time at 25_C (Typ) * Operating Temperature Range -65 to + 200_C * 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents * * * * * (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: Designer's and SWITCHMODE are trademarks of Motorola, Inc. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer'sTM Data Sheet SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating v 10%. Symbol Symbol TJ, Tstg VCEO VCEV RJC VEB IC ICM IB IBM PD TL 100 15 MJ10020 300 200 - 65 to + 200 Max 250 143 1.43 60 100 275 0.7 8.0 20 30 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS MJ10020 MJ10021 MJ10021 CASE 197A-05 TO-204AE (TO-3) 350 250 Order this document by MJ10020/D Watts _C/W W/_C Unit Unit Adc Adc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I 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IIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III I I I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJ10020 MJ10021 (1) Pulse Test: PW = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time Crossover Time Storage Time Crossover Time Storage Time Inductive Load, Clamped (Table 1) Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) Diode Forward Voltage (IF = 30 Adc) Base-Emitter Saturation Voltage (IC = 30 Adc, IB = 1.2 Adc) (IC = 30 Adc, IB = 1.2 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 30 Adc, IB = 1.2 Adc) (IC = 60 Adc, IB = 4.0 Adc) (IC = 30 Adc, IB = 1.2 Adc, TC = 100_C) DC Current Gain (IC = 15 Adc, VCE = 5.0 V) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with base forward biased Emitter Cutoff Current (VEB = 2.0 V, IC = 0) Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) 2 (ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A, VBE(off) = 5 V, TC = 25C) ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A, VBE(off) = 5 V, TC = 100C) (VCC = 175 Vdc, IC = 30 A, IB1 = Adc, VBE(off) = 5.0 V, tp = 25 s 2.0%). Duty Cycle Characteristic v 2%. v MJ10020 MJ10021 VCEO(sus) VCE(sat) VBE(sat) Symbol RBSOA Motorola Bipolar Power Transistor Device Data IEBO ICER ICEV Cob hFE IS/b tsv tsv Vf td tfi tr tf tc tc ts Min 175 200 250 75 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.15 0.25 0.75 0.45 0.07 0.30 0.02 Typ 1.2 1.0 2.5 -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 14 See Figure 13 1000 0.25 5.0 Max 700 175 2.0 3.5 0.5 3.5 1.0 0.2 5.0 3.0 3.5 2.2 4.0 2.4 5.0 -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc pF s s s s s s s s s -- MJ10020 MJ10021 TYPICAL ELECTRICAL CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 700 500 hFE, DC CURRENT GAIN 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.01 IC = 1.0 A 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IB, BASE CURRENT (AMPS) 10 = 10 A = 30 A = 60 A TJ = 25C TJ = 100C 200 100 70 50 30 20 10 1.0 VCE = 5.0 V TJ = 25C 2.0 30 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) 50 70 100 Figure 1. DC Current Gain Figure 2. Collector Saturation Region VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.1 0.2 0.4 6.0 8.0 10 20 40 60 80 100 TJ = 25C TJ = 100C IC/IB = 25 VBE, BASE-EMITTER VOLTAGE (VOLTS) 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 TJ = 100C TJ = 25C IC/IB = 25 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Voltage 104 VCE = 250 V IC, COLLECTOR CURRENT ( A) 103 C, CAPACITANCE (pF) 102 101 TJ = 125C 100C 75C 1000 700 500 TJ = 25C 300 200 100 25C 10 -1 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 100 3.0 5.0 7.0 10 20 30 50 70 100 200 300 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Output Capacitance Motorola Bipolar Power Transistor Device Data 3 MJ10020 MJ10021 Table 1. Test Conditions for Dynamic Performance VCEO(sus) 20 5V 1 TUT 1 2 INPUT SEE ABOVE FOR DETAILED CONDITIONS PW Varied to Attain IC = 100 mA 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1 RBSOA AND INDUCTIVE SWITCHING INDUCTIVE TEST CIRCUIT RESISTIVE SWITCHING TURN-ON TIME 1 2 INPUT CONDITIONS 0 Rcoil Lcoil VCC IB1 IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. VCC = 175 V RL = 5.6 Pulse Width = 25 s RESISTIVE TEST CIRCUIT CIRCUIT VALUES Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) OUTPUT WAVEFORMS Lcoil = 180 H Rcoil = 0.05 VCC = 20 V TEST CIRCUITS t1 Adjusted to Obtain IC ICM t1 tf t2 VCEM TIME t2 Vclamp t tf Clamped t t1 Lcoil (ICM) VCC Lcoil (ICM) VClamp 1 2 TUT RL VCC Test Equipment Scope -- Tektronix 475 or Equivalent * Adjust - V such that VBE(off) = 5 V except as required for RBSOA (Figure 14). ICM 90% VCEM IC tsv trv tc VCE IB 10% VCEM 90% IB1 10% ICM 10 VCEM 90% ICM tfi tti Vclamp I B2(pk), BASE CURRENT (AMPS) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 TIME 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VBE(off), BASE-EMITTER VOLTAGE (VOLTS) 8.0 IC = 30 A IB1 = 1.2 A VCLAMP = 200 V TJ = 25C 2% IC Figure 7. Inductive Switching Measurements 3.2 2.8 t c , CROSSOVER TIME ( s) 2.4 2.0 1.6 1.2 0.8 0.4 0 tc @ 25C 0 1.0 Figure 8. Typical Peak Reverse Base Current 2.4 ICM = 30 A IC/IB = 25 2.1 1.8 1.5 tsv @ 100C 1.2 tsv @ 25C tc @ 100C 0.9 0.6 0.3 8.0 t sv, VOLTAGE STORAGE TIME ( s) 5.0 6.0 7.0 2.0 3.0 4.0 VBE(off), BASE-EMITTER VOLTAGE (VOLTS) Figure 9. Typical Inductive Switching Times 4 Motorola Bipolar Power Transistor Device Data MJ10020 MJ10021 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 - 90% VCEM tfi = Current Fall Time, 90 - 10% ICM tti = Current Tail, 10 - 2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222A: PSWT = 1/2 VCC IC (tc) f In general, t rv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. ^ RESISTIVE SWITCHING 10 7.0 5.0 3.0 2.0 t, TIME ( s) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.6 0.8 1.0 2.0 VCC = 175 V IC/IB = 25 TJ = 25C t, TIME ( s) 1.0 0.7 0.5 0.3 0.2 0.1 td 0.07 0.05 0.03 0.02 tf VCC = 175 V IC/IB = 25 VBE(off) = 5 V TJ = 25C ts tr 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) 40 60 0.6 0.81.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) 40 60 Figure 10. Typical Turn-On Switching Times Figure 11. Typical Turn-Off Switching Times 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 SINGLE PULSE RJC(t) = RJC RJC(t) = 0.7C/W MAX DETERMINE t2 FOR POWER PULSE AND READ r(t) TJ(pk) = TC + P(pk) RJC(t) P(pk) t1 0.01 0.1 1.0 10 t, TIME (ms) 100 1000 10000 Figure 12. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MJ10020 MJ10021 The Safe Operating Area figures shown in Figures 13 and are specified for these devices under the test conditions shown. 100 IC, COLLECTOR CURRENT (AMP) 100 s 10 1 ms SAFE OPERATING AREA INFORMATION FORWARD BIAS 10 s 1.0 TC = 25C 0.1 dc 0.01 1.0 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 2.0 200 300 250 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 5.0 10 20 50 Figure 13. Maximum Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For Inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA characteristics. ICM , PEAK COLLECTOR CURRENT (AMPS) 100 90 80 70 60 50 40 30 20 10 0 0 TURN-OFF LOAD LINE BOUNDARY FOR MJ10021 THE LOCUS FOR MJ10020 IS 50 V LESS 50 100 150 200 250 VBE(off) = 5 V VBE(off) = 2 V VBE(off) = 0 V 300 IC/IB 25 25C TJ 100C VCEM, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 14. Maximum RBSOA, Reverse Bias Safe Operating Area 100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 80 120 TC, CASE TEMPERATURE (C) 160 200 Figure 15. Power Derating 6 Motorola Bipolar Power Transistor Device Data MJ10020 MJ10021 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K M 0.30 (0.012) L G 1 TQ M Y M -Y- H B -Q- 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE (TO-3) ISSUE J Motorola Bipolar Power Transistor Device Data 7 MJ10020 MJ10021 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Bipolar Power Transistor Device Data *MJ10020/D* MJ10020/D |
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